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Instabilities and coarsening during crystal growth : an application to silicon germaniun epitaxial films

Thomas Frisch

Mercredi 10 mars 2010

Mercredi 10 mars, à 11h en salle C. Brot

In my talk, I will review the theory of the surface growth instabilities that appears during molecular beam epitaxy growth of semi-conductor such as silicon and germanium. I will discuss the step bunching instability, the meandering instability and the morphological elastic instability (Grinfel’d Instability) which leads to the formation of silicon-germanium quantum dots. I will also discuss the non-linear regime of those instabilities, the coarsening effects during deposition, and the effect of the surface energy anistropy.

[1] T. Frisch, A. Verga,"Kinetic step bunching instability in surface growth", Physical Review Letters 94, p. 226102 (2005)

2] T. Frisch, A. Verga, "Effect of step stiffness and diffusion anisotropy on the meandering of a growing vicinal surface", Physical Review Letters 96, p. 166104 (2006)

[3] T. Frisch, A. Verga, "Nonlinear evolution of the step meandering instability during surface growth", Physica D 235, p. 15, (2007)

[4] J.-N. Aqua, T. Frisch, A. Verga, "Nonlinear evolution of the elastic stress-driven morphological instability", Physical Review B 76, p. 16579 (2007)

[5] J.-N. Aqua, T. Frisch, "Elastic interactions and kinetics during reversible submonolayer growth Phys. Rev. B 78, 121305 (2008)

[6] J.- N. Aqua, T. Frisch, A. Verga, " Ordering of strained island during surface growth, submitted to Phys Rev E (2010).

IM2NP, Faculté des Sciences et Techniques , Marseille