Instabilities and coarsening during crystal growth : an application to silicon germaniun epitaxial films
Mercredi 10 mars 2010
Mercredi 10 mars, à 11h en salle C. Brot
In my talk, I will review the theory of the surface growth instabilities that appears during molecular beam epitaxy growth of semi-conductor such as silicon and germanium. I will discuss the step bunching instability, the meandering instability and the morphological elastic instability (Grinfel’d Instability) which leads to the formation of silicon-germanium quantum dots. I will also discuss the non-linear regime of those instabilities, the coarsening effects during deposition, and the effect of the surface energy anistropy.
 T. Frisch, A. Verga,"Kinetic step bunching instability in surface growth", Physical Review Letters 94, p. 226102 (2005)
2] T. Frisch, A. Verga, "Effect of step stiffness and diffusion anisotropy on the meandering of a growing vicinal surface", Physical Review Letters 96, p. 166104 (2006)
 T. Frisch, A. Verga, "Nonlinear evolution of the step meandering instability during surface growth", Physica D 235, p. 15, (2007)
 J.-N. Aqua, T. Frisch, A. Verga, "Nonlinear evolution of the elastic stress-driven morphological instability", Physical Review B 76, p. 16579 (2007)
 J.-N. Aqua, T. Frisch, "Elastic interactions and kinetics during reversible submonolayer growth Phys. Rev. B 78, 121305 (2008)
 J.- N. Aqua, T. Frisch, A. Verga, " Ordering of strained island during surface growth, submitted to Phys Rev E (2010).
IM2NP, Faculté des Sciences et Techniques , Marseille
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